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1 cghv27015s 15 w, dc - 6.0 ghz, 50 v, gan hemt crees cghv27015s is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the cghv27015s ideal for lte, 4g telecom and bwa amplifer applications. the cghv27015s gan hemt device is unmatched so it is suitable for power amplifer applications from 10mhz through 6000 mhz, such as tactical communications, catv, uav data links, as well as a driver stage amplifer for radar, ew, and satcom devices. at a vdd of 50 v, the device provide 2.5w of average power or 15w of peak power. at a vdd of 28v, the device provides 1s of average power and 7w of peak power. the transistor is available in a 3mm x 4mm, surface mount, dual-fat- no-lead (dfn) package. package type: 3x4 dfn pn: cghv27015s r e v 2 . 0 C m a y 2 0 1 5 features for 50 v in CGHV27015S-AMP1 ? 2.4 - 2.7 ghz operation ? 15 w typical output power ? 21 db gain at 2.5 w p ave ? -38 dbc aclr at 2.5 w p ave ? 32% effciency at 2.5 w p ave ? high degree of apd and dpd correction can be applied typical performance 2.4-2.7 ghz (t c = 25?c) , 50 v parameter 2.4 ghz 2.5 ghz 2.6 ghz 2.7 ghz units small signal gain 23 22 21.7 21.2 db adjacent channel power @ p out = 2.5 w -36.7 -40.7 -42.4 -42.5 dbc drain effciency @ p out = 2.5 w 35.9 33.5 30.4 30.2 % input return loss -9.312 -9.6 -8.6 -7.8 db note: measured in the CGHV27015S-AMP1 application circuit. under 7.5 db par single carrier wcdma signal test model 1 with 64 dpch. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units notes drain-source voltage v dss 125 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 2 ma 25?c maximum drain current 1 i dmax 0.9 a 25?c soldering temperature 2 t s 245 ?c case operating temperature 3 t c -40, +150 ?c thermal resistance, junction to case 4 r jc 11.1 ?c/w 85?c note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 t c = case temperature for the device. it refers to the temperature at the ground tab underneath the package. the pcb will add additional thermal resistance. see also, the power dissipation de-rating curve on page 7. 4 measured for the cghv27015s at p diss = 5 w 5 the r th for crees demonstration amplifer, CGHV27015S-AMP1, with 31 x 0.011 via holes designed on a 20 mil thick rogers 4350 pcb, is 3.9c. the total r th from the heat sink to the junction is 11.1c + 3.9c = 15c/w. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 2 ma gate quiescent voltage v gs(q) C -2.6 C v dc v ds = 50 v, i d = 60 ma saturated drain current i ds 1.48 1.78 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v (br)dss 150 C C v dc v gs = -8 v, i d = 2 ma rf characteristics 2,3 (t c = 25 ? c, f 0 = 2.7 ghz unless otherwise noted) gain g C 21.2 - db v dd = 50 v, i dq = 60 ma, p out = 34 dbm wcdma linerarity 4 aclr C -42.5 C dbc v dd = 50 v, i dq = 60 ma, p out = 34 dbm drain effciency 4 C 30.2 - % v dd = 50 v, i dq = 60 ma, p out = 34 dbm output mismatch stress vswr - 10 : 1 - y no damage at all phase angles, v dd = 50 v, i dq = 60 ma, p out = 34 dbm dynamic characteristics input capacitance 5 c gs C 3.15 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz output capacitance 5 c ds C 1.06 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.058 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging 2 scaled from pcm data 3 measured in crees production test fxture. this fxture is designed for high volume test at 2.7 ghz 4 single carrier wcdma, 3gpp test model 1, 64 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf 5 includes package and internal matching components cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance in application circuit CGHV27015S-AMP1 figure 1. - small signal gain and return losses vs frequency v dd = 50 v, i dq = 60 ma figure 2. - typical drain effciency and aclr vs. output power v dd = 50 v, i dq = 60 ma, 1 carrier wcdma, par = 7.5 db 0 5 10 15 20 25 30 g a i n (d b ) i n p u t a n d o u tp u t r e tu r n l o s s -25 -20 -15 -10 -5 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 i n p u t a n d o u tp u t r e tu r n l o s s frequency (ghz) s11 s21 s22 20 25 30 35 40 45 -25 -20 -15 -10 -5 0 effi c i e n c y (% ) a c l r (d b c ) aclr_2p4 aclr_2p5 aclr_2p6 aclr_2p7 eff_2p4 eff_2p5 eff_2p6 eff_2p7 0 5 10 15 -45 -40 -35 -30 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 effi c i e n c y (% ) output power (dbm) effciency aclr cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance in application circuit CGHV27015S-AMP1 figure 3. - typical gain, drain effciency and aclr vs frequency v dd = 50 v , i dq = 60 ma, p ave = 2.5 w, 1 carrier wcdma, par = 7.5 db electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm 2 (125 v to 250 v) jedec jesd22 c101-c moisture sensitivity level (msl) classifcation parameter symbol level test methodology moisture sensitivity level msl 3 (168 hours) ipc/jedec j-std-20 gain drain effciency aclr drain effciency aclr gain cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance g max and k-factor vs frequency v dd = 50 v, i dq = 60 ma, tcase = 25c 0.5 0.75 1 1.25 25 30 35 40 k - f act o r g m a x ( d b ) maximum avaliable gain & k-factor cghv27015s vdd = 50 v, idq = 60 ma, tcase = 25 c gmax k-factor 0 0.25 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 frequency (ghz) cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 source and load impedances for application circuit CGHV27015S-AMP1 frequency (mhz) z source z load 2400 7.9 + j2.14 15.8 + j43.1 2500 8 + j2.9 18.3 + j43.7 2600 7.9 + j3.6 19.7 + j43.4 2700 7.7 - j4.4 19.7 + j43.4 note 1 : v dd = 50 v, i dq = 60 ma in the dfn package. note 2 : impedances are extracted from the CGHV27015S-AMP1 application circuit and are not source and load pull data derived from the transistor. CGHV27015S-AMP1 application circuit bill of materials designator description qty r1 res, 332,ohm, +/- 1%, vishay 1 r2 res, 22.6,ohm, +/- 1%, 1/16w, 0603 1 r3, r4 res, 2.2,ohm, +/- 1%, 1/16w, 0603 1 c1, c4 cap, 27pf, +/- 5%, 0603, atc 2 c2 cap, 2.0pf,+/-0.1pf, 0603 atc 1 c3 cap, 0.1pf,+/-0.05 pf, 0603, atc 2 c8 cap, 6.2pf, +/-0.1pf, 0603, atc 1 c13 cap, 10pf +/-5%, 0603, atc 1 c6, c11 cap, 33000pf, 0805, atc 2 c7, c12 cap, 470pf, 5%, 100v, 0603, 2 c10 cap, 1.0uf, 100v, 10%, x7r, 1210 1 c5 cap 10uf 16v tantalum 1 c9 cap, 33uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange, 4-hole, blunt post 2 j3 header rt>plz .1cen lk 5pos 1 q1 cghv27015s, dfn 1 d z source z load g s cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 CGHV27015S-AMP1 application circuit, 50 v CGHV27015S-AMP1 application circuit schematic, 50 v cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 CGHV27015S-AMP1 application circuit, 50 v CGHV27015S-AMP1 power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2) 3 4 5 6 7 po w er d i ssi p ati o n ( w ) 0 1 2 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum temperature ( c) note 1 cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 product dimensions cghv27015s (package 3 x 4 dfn) pin input/output 1 gnd 2 nc 3 rf in 4 rf in 5 nc 6 gnd 7 gnd 8 nc 9 rf out 10 rf out 11 nc 12 gnd note: leadframe fnish for 3x4 dfn package is nickel/palladium/gold. gold is the outer layer. cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 part number system parameter value units upper frequency 1 2.7 ghz power output 15 w package surface mount - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) cree gan high voltage cghv27015s cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 product ordering information order number description unit of measure image cghv27015s gan hemt each CGHV27015S-AMP1 test board with gan hemt installed each cghv27015s-tr delivered in tape and reel 250 parts / reel cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.313.5639 cghv27015s rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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